Today, many computers use dynamic random access memory (DRAM in English), in which each unit of binary digital information, or bit, is stored in a separate capacitor in an integrated circuit. Bode's experiment focused on Magnetoresistive random access memory (MRAM for its acronym in English), which store information in magnetic storage elements consisting of two ferromagnetic layers between which is sandwiched a thin non-magnetic separator. While a of the two layers remains polarized in a constant direction, the other layer is polarized by applying an external magnetic field in the same direction as the top layer (for a "0") or in the opposite direction (for a " 1 ").
Commonly, MRAM are switched by magnetic fields. As has reduced the size of the bit in each successive generation of computers to accommodate more memory in the same physical area, has increased the vulnerability to errors. In this adverse situation, the magnetic field can switch the magnetization of the bit not only objective but also that of its neighboring bits. Using the tip of the microscope STM, which has the capacity to resolve structures down to a single atom, the scientists were able to eliminate this condition.
Commonly, MRAM are switched by magnetic fields. As has reduced the size of the bit in each successive generation of computers to accommodate more memory in the same physical area, has increased the vulnerability to errors. In this adverse situation, the magnetic field can switch the magnetization of the bit not only objective but also that of its neighboring bits. Using the tip of the microscope STM, which has the capacity to resolve structures down to a single atom, the scientists were able to eliminate this condition.
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